RMPA1959

RMPA1959 Datasheet

RMPA1959

Part	Datasheet
RMPA1959	RMPA1959 (pdf)

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RMPA1959 September 2004 RMPA1959 PCS 3.4V CDMA & CDMA2000-1X PowerEdge Power Amplifier Module The RMPA1959 power amplifier module PAM is designed for CDMA and CDMA2000-1X personal communications system PCS applications. The 2 stage PAM is internally matched to minimize the use of external components and features advanced DC power management to reduce current consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology. • Single positive-supply operation and low power and shutdown modes • 39% CDMA efficiency at +28dBm average output power • Compact LCC package- x mm with industry standard pinout • Internally matched to and DC blocked RF input/ output. • Meets CDMA2000-1XRTT performance requirements Device Absolute Ratings1 Parameter Vcc1, Vcc2 Supply Voltages Vref Reference Voltage Vmode Power Control Voltage RF Input Power TSTG Storage Temperature Note 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values. Max +10 +150 Units V dBm °C 2004 Fairchild Semiconductor Corporation RMPA1959 Module Block Diagram VCC1, VCC2 1, 10 COLLECTOR BIAS PA MODULE GND 3, 6, 7, 9, 11 RF IN 2 VREF 5 INPUT MATCHING NETWORK INTERSTAGE MATCH INPUT STAGE MMIC OUTPUT STAGE INPUT STAGE BIAS OUTPUT STAGE BIAS

PDF Datasheet Preview

RMPA1959

September 2004

RMPA1959

PCS 3.4V CDMA & CDMA2000-1X PowerEdge Power Amplifier Module

The RMPA1959 power amplifier module PAM is designed for CDMA and CDMA2000-1X personal communications system PCS applications. The 2 stage PAM is internally matched to minimize the use of external components and features advanced DC power management to reduce current consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor HBT technology.
• Single positive-supply operation and low power and shutdown modes
• 39% CDMA efficiency at +28dBm average output power
• Compact LCC package- x mm with industry
standard pinout
• Internally matched to and DC blocked RF input/
output.
• Meets CDMA2000-1XRTT performance requirements

Device

Absolute Ratings1

Parameter

Vcc1, Vcc2

Supply Voltages

Vref

Reference Voltage

Vmode

Power Control Voltage

RF Input Power

TSTG

Storage Temperature

Note 1 No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

Max +10 +150

Units V
dBm °C
2004 Fairchild Semiconductor Corporation

RMPA1959

Module Block Diagram

VCC1, VCC2 1, 10

COLLECTOR BIAS

PA MODULE

GND 3, 6, 7, 9, 11

RF IN 2

VREF 5

INPUT MATCHING NETWORK

INTERSTAGE MATCH

INPUT STAGE

MMIC

OUTPUT STAGE

INPUT STAGE BIAS

OUTPUT STAGE BIAS

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Datasheet ID: RMPA1959 634682