IRF540A

IRF540A Datasheet

IRF540A

Part	Datasheet
IRF540A	IRF540A (pdf)

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Advanced Power MOSFET IRF540A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 ΟC Operating Temperature Lower Leakage Current 10 µ A Max. VDS = 100V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25 ΟC Continuous Drain Current TC=100 ΟC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25 ΟC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds BVDSS = 100 V RDS on = ID = 28 A TO-220 1.Gate Drain Source Value 100 28 110 +_ 20 523 28 107 - 55 to +175 Units V A V mJ A mJ V/ns W/ ΟC Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- Max. Units ΟC /W 1999 Fairchild Semiconductor Corporation IRF540A N-CHANNEL POWER MOSFET Electrical Characteristics TC=25ΟC unless otherwise specified Symbol BVDSS VGS th IGSS

PDF Datasheet Preview

Advanced Power MOSFET

IRF540A

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 ΟC Operating Temperature Lower Leakage Current 10 µ A Max. VDS = 100V Lower RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25 ΟC

Continuous Drain Current TC=100 ΟC

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25 ΟC Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

BVDSS = 100 V RDS on = ID = 28 A

TO-220
1.Gate Drain Source

Value 100 28 110 +_ 20 523 28 107
- 55 to +175

Units V

A V mJ A mJ V/ns W/ ΟC

Thermal Resistance

Characteristic Junction-to-Case

Case-to-Sink Junction-to-Ambient

Typ. --

Max.

Units ΟC /W
1999 Fairchild Semiconductor Corporation

IRF540A

N-CHANNEL POWER MOSFET

Electrical Characteristics TC=25ΟC unless otherwise specified

Symbol BVDSS

VGS th

IGSS

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Datasheet ID: IRF540A 634037