APTGF50X60T3G

APTGF50X60T3G Datasheet


APTGF50X60T3G

Part Datasheet
APTGF50X60T3G APTGF50X60T3G APTGF50X60T3G (pdf)
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APTGF50X60T3G
3 Phase bridge NPT IGBT Power Module

VCES = 600V IC = 50A* Tc = 80°C
28 R1

It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC

Power is connected between pins 15, 16 & Pins 15 & 16 must be shorted together.

Application
• Motor control

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
28 27 26 25 29 30
23 22
20 19 18 16 15
32 234
13 10 11 12

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage

IC Continuous Collector Current

TC = 25°C

TC = 80°C

ICM Pulsed Collector Current

TC = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

TC = 25°C

Tj = 125°C 100A 500V
* Specification of IGBT device but output current must be limited to 40A at Tc=80°C not to exceed a connectors temperature greater than 120°C.

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF50X60T3G

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit
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Datasheet ID: APTGF50X60T3G 648407