RMBA09501

RMBA09501 Datasheet

RMBA09501

Part	Datasheet
RMBA09501	RMBA09501 (pdf)

PDF Datasheet Preview
RMBA09501 May 2004 RMBA09501 Cellular 2 Watt Linear GaAs MMIC Power Amplifier The RMBA09501 is a highly linear Power Amplifier. The two stage circuit uses our pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation. • 2 Watt Linear output power at 36dBc ACPR1 for CDMA operation • Small Signal Gain of > 30dB • Small outline SMD package Device Absolute Ratings VDD VGS PRF TC TS Parameter Drain Supply Voltage1 Gate Supply Voltage RF Input Power from source Case Operating Temperature Storage Temperature Note Only under quiescent RF applied. Units +100 2004 Fairchild Semiconductor Corporation RMBA09501 Electrical Characteristics2 Parameter Frequency Range Gain Small Signal Gain Variation: Over Frequency Range Over Temperature Range Noise Figure Linear Output Power for CDMA3 OIP35 Idd 33dBm Pout 7V PAE 33dBm Pout Input VSWR RF Input Power Drain Voltage VDD Gate Voltages VG1, VG2 4 Quiescent Currents IDQ1, IDQ2 4 Thermal Resistance Channel to Case Rjc 150, 400 Units MHz dB dB dBm A % dBm V mA °C/W Notes VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input and output matching to 9 Channel Forward Link QPSK Source 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve IDQTOTAL = 550mA can be used with nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been optimized for CDMA operation. IDQ1 and IDQ2 or IDQTOTAL can be adjusted to optimize the linearity of the amplifier for other modulation systems. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25MHz at bandcenter. The device requires external input and output matching to as shown in Figure 3 and the Parts List. 2004 Fairchild Semiconductor Corporation RMBA09501 Application Information CAUTION THIS IS AN ESD SENSITIVE DEVICE The following describes a procedure for evaluating the RMBA09501, a monolithic high efficiency power amplifier, in a surface mount package, designed for use as a driver stage for Cellular Base stations, or as the final output stage for Microand Pico-Cell base stations. Figure 1 shows the package outline and the pin designations. Figure 2 shows the functional block diagram of the packaged product. The RMBA09501 requires external passive components for DC bias and RF input and output matching circuits as shown in Figure 3 and the Part List. A recommended schematic circuit is shown in Figure The gate biases for the two stages of the amplifier may be set by simple resistive voltage dividers. Figure 4 shows a typical layout of an evaluation board, corresponding to the schematic circuits of Figure The following designations should be noted: 1 Pin designations are as shown in Figure 2 Vg1 and Vg2 are the Gate Voltages negative applied at the pins of the package. 3 Vgg1 and Vgg2 are the negative supply voltages at the evaluation board terminals. 4 Vd1 and Vd2 are the Drain Voltages positive applied at the pins of the package. 5 Vdd1 and Vdd2 are the positive supply voltages at the evaluation board terminals. Note The 2 terminals of Vdd1 and Vdd2 may be tied together. The base of the package must be soldered on to a heat sink for proper operation. Top View

PDF Datasheet Preview

RMBA09501

May 2004

RMBA09501

Cellular 2 Watt Linear GaAs MMIC Power Amplifier

The RMBA09501 is a highly linear Power Amplifier. The two stage circuit uses our pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and Pico-Cell base stations. The amplifier has been optimized for high linearity requirements for CDMA operation.
• 2 Watt Linear output power at 36dBc ACPR1 for CDMA operation
• Small Signal Gain of > 30dB
• Small outline SMD package

Device

Absolute Ratings

VDD VGS PRF TC TS

Parameter Drain Supply Voltage1 Gate Supply Voltage RF Input Power from source Case Operating Temperature Storage Temperature

Note Only under quiescent RF applied.

Units
+100
2004 Fairchild Semiconductor Corporation

RMBA09501

Electrical Characteristics2

Parameter Frequency Range Gain Small Signal Gain Variation:

Over Frequency Range Over Temperature Range Noise Figure Linear Output Power for CDMA3 OIP35 Idd 33dBm Pout 7V PAE 33dBm Pout Input VSWR RF Input Power Drain Voltage VDD Gate Voltages VG1, VG2 4 Quiescent Currents IDQ1, IDQ2 4 Thermal Resistance Channel to Case Rjc
150, 400

Units MHz dB
dB dBm A %
dBm V mA
°C/W

Notes VDD = 7.0V, TC = 25°C. Part mounted on evaluation board with input and output matching to 9 Channel Forward Link QPSK Source 1.23Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23MHz channel
at band center to the average power within a 30KHz bandwidth at an 885KHz offset. Minimum CDMA output power is met with ACPR1 > 36dBc. VG1 and VG2 must be individually adjusted to achieve IDQ1 and IDQ2. A single VGG bias supply adjusted to achieve IDQTOTAL = 550mA can be used with
nearly equivalent performance. Values for IDQ1 and IDQ2 shown have been optimized for CDMA operation. IDQ1 and IDQ2 or IDQTOTAL can be adjusted to optimize the linearity of the amplifier for other modulation systems. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25MHz at bandcenter.

The device requires external input and output matching to as shown in Figure 3 and the Parts List.
2004 Fairchild Semiconductor Corporation

RMBA09501

Application Information

CAUTION THIS IS AN ESD SENSITIVE DEVICE

The following describes a procedure for evaluating the RMBA09501, a monolithic high efficiency power amplifier, in a surface mount package, designed for use as a driver stage for Cellular Base stations, or as the final output stage for Microand Pico-Cell base stations. Figure 1 shows the package outline and the pin designations. Figure 2 shows the functional block diagram of the packaged product. The RMBA09501 requires external passive components for DC bias and RF input and output matching circuits as shown in Figure 3 and the Part List. A recommended schematic circuit is shown in Figure The gate biases for the two stages of the amplifier may be set by simple resistive voltage dividers. Figure 4 shows a typical layout of an evaluation board, corresponding to the schematic circuits of Figure The following designations should be noted:
1 Pin designations are as shown in Figure
2 Vg1 and Vg2 are the Gate Voltages negative applied at the pins of the package.
3 Vgg1 and Vgg2 are the negative supply voltages at the evaluation board terminals.
4 Vd1 and Vd2 are the Drain Voltages positive applied at the pins of the package.
5 Vdd1 and Vdd2 are the positive supply voltages at the evaluation board terminals.

Note The 2 terminals of Vdd1 and Vdd2 may be tied together. The base of the package must be soldered on to a heat sink for proper operation.

Top View

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Datasheet ID: RMBA09501 634675