BSB012NE2LX
BSB012NE2LX Datasheet
OptiMOS BSB012NE2LX
| Part | Datasheet |
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BSB012NE2LX |
BSB012NE2LX (pdf) |
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| n-Channel Power MOSFET OptiMOS BSB012NE2LX Data Sheet 2011-09-16 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB012NE2LX OptiMOS 25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS 25V the best choice for the demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications • Optimized for high performance Buck converter • 100% avalanche tested • Qualified according to JEDEC1 for target applications • Superior thermal resistance • Pb-free plating RoHS compliant • Halogen-free according to IEC61249-2-21 • Double.sided cooling • Compatible with package MX footprint and outline • 100% Rg Tested • Low parasitic inductance • Low profile mm • On board power for server • Power managment for high performance computing • Synchronous rectification • High power density point of load converters Table 1 Key Performance Parameters Parameter Value Unit RDS on ,max QOSS Qg.typ Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools Type BSB012NE2LX Package MG-WDSON-2 Marking 01E2 1 J-STD20 and JESD22 Final Data Sheet 2011-09-16 OptiMOS Power-MOSFET BSB012NE2LX Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Continuous drain current Pulsed drain current1 Avalanche current, single pulse2 Avalanche energy, single pulse Gate source voltage Power dissipation ID,pulse IAS EAS VGS Ptot Operating and storage temperature Tj,Tstg IEC climatic category DIN IEC 68-1 See figure 3 for more detailed information 2 See figure 13 for more detailed information Min. - Values Typ. Max. -20 - -40 - 55/150/56 Unit Note / Test Condition VGS=10 V, TC=25 °C VGS=10 V, TC=100 °C VGS=10 V, TA=25 °C, RthJA=45 K/W |
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