MS2552
MS2552 Datasheet
MS2552
| Part | Datasheet |
|---|---|
MS2552 |
MS2552 (pdf) |
| PDF Datasheet Preview |
|---|
| W.Microsemi .C O M RF PRODUCTS DIVISION MS2552 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW The MS2552 device is a high power pulsed transistor specifically designed for DME/TACAN avionics applications. This device is capable of withstanding an infinite load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semiautomatic bonding techniques ensure high reliability and product consistency. The MS2552 is housed in the industry-standard metal/ceramic hermetic package with internal input/output matching structures. IMPORTANT For the most current data, consult MICROSEMI’s website: KEY FEATURES Refractory/Gold Metallization Emitter Ballasted Ruggedized VSWR ∞ :1 Capability Input/Output Matching Overlay Geometry Metal/Ceramic Hermetic Package POUT = 325 W Min. GP = dB Gain APPLICATIONS/BENEFITS Avionics Applications ABSOLUTE MAXIMUM RATINGS TCASE = 25°C Parameter Value Unit PDISS Power Dissipation* TC 100°C Device Current* VCC Collector-Supply Voltage* Junction Temperature Pulsed RF Operation TSTG Storage Temperature -65 to +150 °C RTH j-c THERMAL DATA Junction-Case Thermal Resistance Applies only to rated RF amplifier operation °C/W MS2552 X 2NLFL hermetically sealed Copyright 2000 MSC1665.PDF 2001-02-20 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, 215 631-9840, Fax 215 631-9855 W.Microsemi .C O M RF PRODUCTS DIVISION MS2552 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW BVCBO BVEBO BVCER |
| More datasheets: MB96F355ASBPMC1-GSE2 | MB96F355ASBPMC-GSE2 | MB96F353RSBPMC-GSE2 | TLE7729TXUMA1 | MX25L3239EM2I-10G | MX25L3239EMBI-10G | MX25L3239EZNI-10G | DCMMN8C8PN | BSB012NE2LX | DAM-11W1P-A191-K87 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MS2552 Datasheet file may be downloaded here without warranties.