QSD724

QSD724 Datasheet

QSD722

Part	Datasheet
QSD724	QSD724 (pdf)

Related Parts	Information
QSD723	QSD723
QSD722	QSD722

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PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 PACKAGE DIMENSIONS 45° REFERENCE SURFACE EMITTER COLLECTOR NOM SQ 2PLCS 45° RADIUS NOTES Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. QSD723 QSD724 SCHEMATIC COLLECTOR EMITTER The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. • NPN Silicon Phototransistor • Package Type Plastic TO-18 • Matched Emitter QED523 • Narrow Reception Angle, 40° • Daylight Filter • Package material and color black epoxy • High Sensitivity 2001 Fairchild Semiconductor Corporation DS300363 7/18/01 1 OF 4 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 QSD723 QSD724 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1 Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. ! = 880 nm, AlGaAs. ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C PARAMETER TEST CONDITIONS Peak Sensitivity Wavelength Reception Angle ±20 Collector-Emitter Dark Current Collector-Emitter Breakdown VCE = 10 V, Ee = 0 ICEO IC = 1 mA BVCEO Emitter-Collector Breakdown On-State Collector Current 5 IE = 100 µA BVECO QSD722 QSD723 QSD724

PDF Datasheet Preview

PLASTIC SILICON INFRARED PHOTOTRANSISTOR

QSD722

PACKAGE DIMENSIONS
45°

REFERENCE SURFACE

EMITTER

COLLECTOR

NOM SQ 2PLCS
45° RADIUS

NOTES Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.

QSD723 QSD724

SCHEMATIC

COLLECTOR EMITTER

The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package.
• NPN Silicon Phototransistor
• Package Type Plastic TO-18
• Matched Emitter QED523
• Narrow Reception Angle, 40°
• Daylight Filter
• Package material and color black epoxy
• High Sensitivity
2001 Fairchild Semiconductor Corporation DS300363 7/18/01
1 OF 4

PLASTIC SILICON INFRARED PHOTOTRANSISTOR

QSD722 QSD723 QSD724

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 2,3,4 Soldering Temperature Flow 2,3 Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation 1

Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD

Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec
30 5 100

Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16” 1.6mm minimum from housing. ! = 880 nm, AlGaAs.

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C

PARAMETER

TEST CONDITIONS

Peak Sensitivity Wavelength Reception Angle
±20

Collector-Emitter Dark Current Collector-Emitter Breakdown

VCE = 10 V, Ee = 0

ICEO

IC = 1 mA

BVCEO

Emitter-Collector Breakdown On-State Collector Current 5

IE = 100 µA

BVECO

QSD722

QSD723 QSD724

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Datasheet ID: QSD724 634532