BC860CE6359HTMA1
BC860CE6359HTMA1 Datasheet
BC856...BC860
| Part | Datasheet |
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BC860CE6359HTMA1 |
BC860CE6359HTMA1 (pdf) |
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| PNP Silicon AF Transistors BC856...BC860 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types BC846, BC847, BC848 BC849, BC850 NPN 2 1 VPS05161 Type BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C BC859A BC859B BC859C BC860B BC860C Marking 3As 3Bs 3Es 3Fs 3Gs 3Js 3Ks 3Ls 4As 4Bs 4Cs 4Fs 4Gs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration Package SOT23 Dec-11-2001 BC856...BC860 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1 VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC856 BC857 BC858 Unit BC860 BC859 -65 150 RthJS Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V BR CEO IC = 10 mA, IB = 0 BC856 BC857/860 BC858/859 Collector-base breakdown voltage V BR CBO IC = 10 µA, IE = 0 BC856 BC857/860 BC858/859 1For calculation of RthJA please refer to Application Note Thermal Resistance Dec-11-2001 BC856...BC860 Electrical Characteristics at TA = 25°C, unless otherwise specified. |
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