MUR820

MUR820 Datasheet

MUR820, RURP820

Part	Datasheet
MUR820	MUR820 (pdf)

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Data Sheet MUR820, RURP820 January 2002 8A, 200V Ultrafast Diodes MUR820 and RURP820 are ultrafast diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/ clamping diodes and in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA09223. Ordering Information PACKAGE BRAND MUR820 TO-220AC MUR820 RURP820 TO-220AC RURP820 NOTE When ordering, use the entire part number. • Switching Power Supplies • Power Switching Circuits • General Purpose Packaging JEDEC TO-220AC CATHODE FLANGE ANODE CATHODE Absolute Maximum Ratings TC = 25oC, Unless Otherwise TC = 157oC Repetitive Peak Surge Current IFRM Square Wave, 20kHz Nonrepetitive Peak Surge Current IFSM Halfwave, 1 Phase, 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 10 and 11 .EAVL Operating and Storage Temperature .TSTG, TJ MUR820 RURP820 50 20 -65 to 175 UNITS V A W mJ oC 2002 Fairchild Semiconductor Corporation MUR820, RURP820 Electrical TC = 25oC, Unless Otherwise TEST CONDITION UNITS IF = 8A IF = 8A, TC = 150oC VR = 200V VR = 200V, TC = 150oC IF = 1A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs IF = 8A, dIF/dt = 200A/µs VR = 10V, IF = 0A oC/W DEFINITIONS D = Duty cycle. Typical Performance Curves 100oC 100 175oC 175oC 25oC VF, FORWARD VOLTAGE V FIGURE FORWARD CURRENT vs FORWARD VOLTAGE 100oC 25oC

PDF Datasheet Preview

Data Sheet

MUR820, RURP820

January 2002
8A, 200V Ultrafast Diodes

MUR820 and RURP820 are ultrafast diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.

These devices are intended for use as freewheeling/ clamping diodes and in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Formerly developmental type TA09223.
Ordering Information

PACKAGE

BRAND

MUR820

TO-220AC

MUR820

RURP820

TO-220AC

RURP820
NOTE When ordering, use the entire part number.
• Switching Power Supplies
• Power Switching Circuits
• General Purpose

Packaging

JEDEC TO-220AC

CATHODE FLANGE

ANODE CATHODE

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

TC = 157oC Repetitive Peak Surge Current IFRM

Square Wave, 20kHz Nonrepetitive Peak Surge Current IFSM

Halfwave, 1 Phase, 60Hz Maximum Power Dissipation PD Avalanche Energy See Figures 10 and 11 .EAVL Operating and Storage Temperature .TSTG, TJ

MUR820 RURP820
50 20 -65 to 175

UNITS V A

W mJ oC
2002 Fairchild Semiconductor Corporation

MUR820, RURP820

Electrical TC = 25oC, Unless Otherwise

TEST CONDITION

UNITS

IF = 8A

IF = 8A, TC = 150oC

VR = 200V

VR = 200V, TC = 150oC

IF = 1A, dIF/dt = 200A/µs

IF = 8A, dIF/dt = 200A/µs

IF = 8A, dIF/dt = 200A/µs

IF = 8A, dIF/dt = 200A/µs

IF = 8A, dIF/dt = 200A/µs

VR = 10V, IF = 0A
oC/W

DEFINITIONS

D = Duty cycle.

Typical Performance Curves
100oC
100 175oC
175oC
25oC

VF, FORWARD VOLTAGE V

FIGURE FORWARD CURRENT vs FORWARD VOLTAGE
100oC
25oC

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MUR820 Datasheet file may be downloaded here without warranties.

Datasheet ID: MUR820 634480