SPP77N06S2-12
SPP77N06S2-12 Datasheet
SPP77N06S2-12 SPB77N06S2-12
| Part | Datasheet |
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SPP77N06S2-12 |
SPP77N06S2-12 (pdf) |
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SPB77N06S2-12 |
SPB77N06S2-12 |
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| Power-Transistor Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated SPP77N06S2-12 SPB77N06S2-12 Product Summary RDS on P- TO263 -3-2 P- TO220 -3-1 Type SPP77N06S2-12 SPB77N06S2-12 Package Ordering Code P- TO220 -3-1 Q67060-S6029 P- TO263 -3-2 Q67060-S6030 Marking 2N0612 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=77A, VDD=25V, IS=77A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 80 56 320 ±20 158 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 2 SPP77N06S2-12 SPB77N06S2-12 Values Unit min. typ. max. RthJC RthJA - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. |
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