APTGF50H60T3G
APTGF50H60T3G Datasheet
APTGF50H60T3G
| Part | Datasheet |
|---|---|
APTGF50H60T3G |
APTGF50H60T3G (pdf) |
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| APTGF50H60T3G Full - Bridge NPT IGBT Power Module VCES = 600V IC = 50A Tc = 80°C 28 27 26 25 29 30 23 22 20 19 18 16 15 32 234 13 10 11 12 All multiple inputs and outputs must be shorted together Example 13/14 29/30 22/23 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current TC = 25°C TC = 80°C ICM Pulsed Collector Current TC = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation TC = 25°C Tj = 125°C 100A 500V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF50H60T3G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE sat VGE th IGES Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current VGE = 0V VCE = 600V Tj = 25°C Tj = 125°C |
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