HUFA76423P3

HUFA76423P3 Datasheet

HUFA76423P3, HUFA76423S3S

Part	Datasheet
HUFA76423P3	HUFA76423P3 (pdf)

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Data Sheet HUFA76423P3, HUFA76423S3S December 2001 33A, 60V, Ohm, N-Channel, Logic Level Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE DRAIN FLANGE HUFA76423P3 GATE SOURCE HUFA76423S3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information PACKAGE BRAND HUFA76423P3 TO-220AB 76423P HUFA76423S3S TO-263AB 76423S NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76423S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUFA76423P3, HUFA76423S3S UNITS Drain to Source Voltage Note 1 VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage VGS ±16 Drain Current Continuous TC = 25oC, VGS = 5V ID Continuous TC = 25oC, VGS = 10V Figure 2 ID Continuous 100oC, 100oC, 5V 4.5V Figure 23 22 Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation PD Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES: 85 -55 to 175 300 260 W/oC TJ = 25oC to 150oC. CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUFA76423P3, HUFA76423S3S Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BVDSS IDSS IGSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12 VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC

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Data Sheet

HUFA76423P3, HUFA76423S3S

December 2001
33A, 60V, Ohm, N-Channel, Logic Level Power MOSFETs

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE DRAIN GATE

DRAIN FLANGE

DRAIN FLANGE

HUFA76423P3

GATE SOURCE

HUFA76423S3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information

PACKAGE

BRAND

HUFA76423P3

TO-220AB
76423P

HUFA76423S3S

TO-263AB
76423S
NOTE When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76423S3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

HUFA76423P3, HUFA76423S3S

UNITS

Drain to Source Voltage Note 1 VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage VGS
±16

Drain Current

Continuous TC = 25oC, VGS = 5V ID

Continuous TC = 25oC, VGS = 10V Figure 2 ID

Continuous
100oC, 100oC,
5V 4.5V Figure
23 22

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 17, 18

Power Dissipation PD Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief TB334. Tpkg NOTES:
85 -55 to 175
300 260

W/oC

TJ = 25oC to 150oC.

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Reliability data can be found at All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUFA76423P3, HUFA76423S3S

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BVDSS IDSS IGSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12

VDS = 55V, VGS = 0V VDS = 50V, VGS = 0V, TC = 150oC

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Datasheet ID: HUFA76423P3 634006