HGTP12N60C3

HGTP12N60C3 Datasheet

HGTP12N60C3, HGT1S12N60C3S

Part	Datasheet
HGTP12N60C3	HGTP12N60C3 (pdf)

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Data Sheet HGTP12N60C3, HGT1S12N60C3S December 2001 24A, 600V, UFS Series N-Channel IGBTs The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49123. Ordering Information PART NUMBER HGTP12N60C3 PACKAGE TO-220AB BRAND P12N60C3 HGT1S12N60C3S TO-263AB S12N60C3 NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A. • 24A, 600V at TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR FLANGE JEDEC TO-263AB GATE EMITTER COLLECTOR FLANGE FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 2001 Fairchild Semiconductor Corporation HGTP12N60C3, HGT1S12N60C3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage BVCES Collector Current Continuous HGTP12N60C3, HGT1S12N60C3S 600 24 12 96 ±20 ±30 24A at 600V 104 100 -40 to 150 260 4 13 UNITS V W/oC mJ oC µs µs CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Repetitive Rating Pulse width limited by maximum junction temperature. VCE PK = 360V, TJ = 125oC, RG = Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS MAX UNITS Collector to Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA BVCES IC = 250µA, VGE = 0V BVECS ICES

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Data Sheet

HGTP12N60C3, HGT1S12N60C3S

December 2001
24A, 600V, UFS Series N-Channel IGBTs

The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly Developmental Type TA49123.
Ordering Information

PART NUMBER HGTP12N60C3

PACKAGE TO-220AB

BRAND P12N60C3

HGT1S12N60C3S TO-263AB

S12N60C3
NOTE When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A.
• 24A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. 230ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss

Packaging

JEDEC TO-220AB

EMITTER COLLECTOR GATE

COLLECTOR FLANGE

JEDEC TO-263AB

GATE EMITTER

COLLECTOR FLANGE

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,598,461 4,682,195 4,803,533 4,888,627
4,417,385 4,605,948 4,684,413 4,809,045 4,890,143
4,430,792 4,620,211 4,694,313 4,809,047 4,901,127
4,443,931 4,631,564 4,717,679 4,810,665 4,904,609
4,466,176 4,639,754 4,743,952 4,823,176 4,933,740
4,516,143 4,639,762 4,783,690 4,837,606 4,963,951
4,532,534 4,641,162 4,794,432 4,860,080 4,969,027
4,587,713 4,644,637 4,801,986 4,883,767
2001 Fairchild Semiconductor Corporation

HGTP12N60C3, HGT1S12N60C3S

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Collector to Emitter Voltage BVCES Collector Current Continuous

HGTP12N60C3, HGT1S12N60C3S 600
24 12 96 ±20 ±30 24A at 600V 104 100 -40 to 150 260 4 13

UNITS V

W/oC
mJ oC µs µs

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Repetitive Rating Pulse width limited by maximum junction temperature. VCE PK = 360V, TJ = 125oC, RG =

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

MAX UNITS

Collector to Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage

Gate to Emitter Leakage Current Switching SOA

BVCES

IC = 250µA, VGE = 0V

BVECS ICES

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Datasheet ID: HGTP12N60C3 633904