MPSA77_D75Z

MPSA77_D75Z Datasheet

MPSA77 PNP Darlington Transistor

Part	Datasheet
MPSA77_D75Z	MPSA77_D75Z (pdf)

Related Parts	Information
MPSA77	MPSA77
MPSA77_D26Z	MPSA77_D26Z
MPSA77_D74Z	MPSA77_D74Z

PDF Datasheet Preview
MPSA77 PNP Darlington Transistor MPSA77 PNP Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process March 2009 TO-92 Emitter Base Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Parameter Value VCES Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. -60 -60 -10 -55 ~ +150 NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 200 Units V A °C Units mW/°C °C/W °C/W 2009 Fairchild Semiconductor Corporation MPSA77 PNP Darlington Transistor Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CES

PDF Datasheet Preview

MPSA77 PNP Darlington Transistor

MPSA77

PNP Darlington Transistor
• This device is designed for applications requiring extremely high current gain at currents to 800mA.
• Sourced from process

March 2009

TO-92

Emitter Base Collector

Absolute Maximum Ratings * Ta=25°C unless otherwise noted

Parameter

Value

VCES

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

Collector Current
- Continuous

TJ, TSTG

Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
-60 -60 -10 -55 ~ +150

NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Max.
625 200

Units

V A °C

Units
mW/°C °C/W °C/W
2009 Fairchild Semiconductor Corporation

MPSA77 PNP Darlington Transistor

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

Off Characteristics

V BR CES

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Datasheet ID: MPSA77_D75Z 634453