MPSA77_D74Z
MPSA77_D74Z Datasheet
MPSA77 PNP Darlington Transistor
| Part | Datasheet |
|---|---|
MPSA77_D74Z |
MPSA77_D74Z (pdf) |
| Related Parts | Information |
|---|---|
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MPSA77 |
MPSA77 |
|
MPSA77_D26Z |
MPSA77_D26Z |
|
MPSA77_D75Z |
MPSA77_D75Z |
| PDF Datasheet Preview |
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| MPSA77 PNP Darlington Transistor MPSA77 PNP Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process March 2009 TO-92 Emitter Base Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Parameter Value VCES Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. -60 -60 -10 -55 ~ +150 NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 625 200 Units V A °C Units mW/°C °C/W °C/W 2009 Fairchild Semiconductor Corporation MPSA77 PNP Darlington Transistor Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition Off Characteristics V BR CES |
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