HGTG12N60B3

HGTG12N60B3 Datasheet

HGTG12N60B3

Part	Datasheet
HGTG12N60B3	HGTG12N60B3 (pdf)

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Data Sheet HGTG12N60B3 August 2003 27A, 600V, UFS Series N-Channel IGBTs This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49171. Ordering Information PACKAGE BRAND HGTG12N60B3 TO-247 G12N60B3 NOTE When ordering, use the entire part number. • 27A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. 112ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss Packaging JEDEC STYLE TO-247 COLLECTOR BOTTOM SIDE METAL FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 2003 Fairchild Semiconductor Corporation HGTG12N60B3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage .BVCES Collector Current Continuous. IC25 At TC = 110oC IC110 Collector Current Pulsed Note 1 ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed .VGEM Switching Safe Operating Area at TJ = 150oC Figure 2 SSOA Maximum Power Dissipation PD Linear Derating Factor Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, see Tech Brief .Tpkg Short Circuit Withstand Time Note 2 at VGE = 12V. .tSC Short Circuit Withstand Time Note 2 at VGE = 10V. .tSC HGTG12N60B3 600 27 12 110 ±20 ±30 96A at 600V 104 100 -55 to 150 300 260 UNITS V A V W/oC mJ oC oC µs µs CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Pulse width limited by maximum junction temperature. VCE PK = 360V, TJ = 125oC, RG = Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER TEST CONDITIONS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA

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Data Sheet

HGTG12N60B3

August 2003
27A, 600V, UFS Series N-Channel IGBTs

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49171.
Ordering Information

PACKAGE

BRAND

HGTG12N60B3

TO-247

G12N60B3
NOTE When ordering, use the entire part number.
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. 112ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

COLLECTOR BOTTOM SIDE METAL

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,598,461 4,682,195 4,803,533 4,888,627
4,417,385 4,605,948 4,684,413 4,809,045 4,890,143
4,430,792 4,620,211 4,694,313 4,809,047 4,901,127
4,443,931 4,631,564 4,717,679 4,810,665 4,904,609
4,466,176 4,639,754 4,743,952 4,823,176 4,933,740
4,516,143 4,639,762 4,783,690 4,837,606 4,963,951
4,532,534 4,641,162 4,794,432 4,860,080 4,969,027
4,587,713 4,644,637 4,801,986 4,883,767
2003 Fairchild Semiconductor Corporation

HGTG12N60B3

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Collector to Emitter Voltage .BVCES Collector Current Continuous. IC25

At TC = 110oC IC110 Collector Current Pulsed Note 1 ICM Gate to Emitter Voltage Continuous. VGES Gate to Emitter Voltage Pulsed .VGEM Switching Safe Operating Area at TJ = 150oC Figure 2 SSOA Maximum Power Dissipation PD

Linear Derating Factor

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, see Tech Brief .Tpkg Short Circuit Withstand Time Note 2 at VGE = 12V. .tSC Short Circuit Withstand Time Note 2 at VGE = 10V. .tSC

HGTG12N60B3 600 27 12 110 ±20 ±30
96A at 600V 104 100
-55 to 150
300 260

UNITS V A V

W/oC
mJ oC
oC µs µs

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Pulse width limited by maximum junction temperature. VCE PK = 360V, TJ = 125oC, RG =

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

TEST CONDITIONS

Collector to Emitter Breakdown Voltage

BVCES

IC = 250µA, VGE = 0V

Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current

Collector to Emitter Saturation Voltage

Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA

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Datasheet ID: HGTG12N60B3 633899