MBR20S100CTTU
MBR20S100CTTU Datasheet
MBR20S100CT Schottky Barrier Rectifier
| Part | Datasheet |
|---|---|
MBR20S100CTTU |
MBR20S100CTTU (pdf) |
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| MBR20S100CT Schottky Barrier Rectifier MBR20S100CT Schottky Barrier Rectifier • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection • Switched mode power supply • Freewheeling diodes TO-220 Marking YM20S100CT Anode 2.Cathode Anode Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VRRM VR IF AV IFSM Average Rectified Forward Current = 135°C Non-Repetitive Peak Surge Current per diode 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature Thermal Characteristics Parameter Maximum Thermal Resistance, Junction to Case per diode Electrical Characteristics TC = 25°C unless otherwise noted Parameter VFM* IRM* Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A * Pulse Test Width = 300µs, Duty Cycle = 2% TC = 25°C TC = 125°C TC = 25°C TC = 125°C TC = 25°C TC = 125°C Value 100 20 200 -65 to +150 Value Value Units Units °C/W Units 2005 Fairchild Semiconductor Corporation MBR20S100CT Schottky Barrier Rectifier Typical Performance Characteristics Forward Current, I [A] F Juntion Capacitance, C [pF] J Max. Forward Surge Current, I [A] FSM Average Forward Current, I [A] F AV |
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