IRFS350A

IRFS350A Datasheet

IRFS350A

Part	Datasheet
IRFS350A	IRFS350A (pdf)

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3RZHU 026 7 Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10µA Max. VDS = 400V Low RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25°C Continuous Drain Current TC=100°C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25°C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds IRFS350A BVDSS = 400 V RDS on = ID = A TO-3PF 1.Gate Drain Source Value 400 68 ±30 1134 92 - 55 to +150 Units V A V mJ A mJ V/ns W/°C Thermal Resistance Characteristic Junction-to-Case Junction-to-Ambient Typ. --- Max. 40 Units °C/W 1999 Fairchild Semiconductor Corporation IRFS350A 32 5 026 7 Electrical Characteristics TC=25°C unless otherwise specified Symbol BVDSS VGS th IGSS

PDF Datasheet Preview

3RZHU 026 7

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10µA Max. VDS = 400V Low RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID

IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25°C

Continuous Drain Current TC=100°C

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25°C Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

IRFS350A

BVDSS = 400 V RDS on = ID = A

TO-3PF
1.Gate Drain Source

Value 400 68 ±30 1134 92
- 55 to +150

Units V

A V mJ A mJ V/ns W/°C

Thermal Resistance

Characteristic Junction-to-Case Junction-to-Ambient

Typ. ---

Max. 40

Units °C/W
1999 Fairchild Semiconductor Corporation

IRFS350A
32 5 026 7

Electrical Characteristics TC=25°C unless otherwise specified

Symbol BVDSS

VGS th

IGSS

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Datasheet ID: IRFS350A 634054