L14P1

L14P1 Datasheet

L14P1 L14P2

Part	Datasheet
L14P1	L14P1 (pdf)

Related Parts	Information
L14P2	L14P2

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HERMETIC SILICON PHOTOTRANSISTOR PACKAGE DIMENSIONS L14P1 L14P2 13 45° Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise specified. SCHEMATIC CONNECTED TO CASE COLLECTOR 3 BASE 2 1 EMITTER The L14P1/L14P2 are silicon phototransistors mounted in a narrow angle, TO-18 package. • Hermetically sealed package • Narrow reception angle • Devices can be used as a photodiode by wiring the collector and base leads. 2001 Fairchild Semiconductor Corporation DS300309 6/01/01 1 OF 4 HERMETIC SILICON PHOTOTRANSISTOR L14P1 L14P2 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2 TOPR TSTG TSOL-I TSOL-F VCEO VCBO VEBO Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec 30 40 5 300 600 Unit °C °C °C °C NOTE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of mW/cm2 is approximately equivalent to a tungsten source, at 2870°K, of 10 mW/cm2. ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14P1 On-State Collector Current L14P2 On-State Photodiode Current Rise Time Fall Time Saturation Voltage L14P1 Saturation Voltage L14P2 TEST CONDITIONS SYMBOL MIN UNITS IC = 10 mA, Ee = 0 BVCEO IE = 100 µA, Ee = 0 BVEBO IC = 100 µA, Ee = 0 BVCBO VCE = 12 V, Ee = 0 ICEO Degrees Ee = mW/cm2, VCE = 5 V 7,8 IC ON

PDF Datasheet Preview

HERMETIC SILICON PHOTOTRANSISTOR

PACKAGE DIMENSIONS

L14P1 L14P2
13 45°

Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions
unless otherwise specified.

SCHEMATIC

CONNECTED TO CASE COLLECTOR 3

BASE 2
1 EMITTER

The L14P1/L14P2 are silicon phototransistors mounted in a narrow angle, TO-18 package.
• Hermetically sealed package
• Narrow reception angle
• Devices can be used as a photodiode by wiring the collector and base leads.
2001 Fairchild Semiconductor Corporation DS300309 6/01/01
1 OF 4

HERMETIC SILICON PHOTOTRANSISTOR

L14P1 L14P2

ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise specified

Parameter Operating Temperature Storage Temperature Soldering Temperature Iron 3,4,5 and 6 Soldering Temperature Flow 3,4 and 6 Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdwon Voltage Power Dissipation TA = 25°C 1 Power Dissipation TC = 25°C 2

TOPR TSTG TSOL-I TSOL-F

VCEO VCBO VEBO

Rating -65 to +125 -65 to +150 240 for 5 sec 260 for 10 sec
30 40 5 300 600

Unit °C °C °C °C

NOTE Derate power dissipation linearly mW/°C above 25°C ambient. Derate power dissipation linearly mW/°C above 25°C case. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron tip 1/16” 1.6mm minimum from housing. As long as leads are not under any stress or spring tension. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.

ELECTRICAL / OPTICAL CHARACTERISTICS TA =25°C All measurements made under pulse conditions

PARAMETER Collector-Emitter Breakdown Emitter-Base Breakdown Collector-Base Breakdown Collector-Emitter Leakage Reception Angle at 1/2 Sensitivity On-State Collector Current L14P1 On-State Collector Current L14P2 On-State Photodiode Current Rise Time Fall Time Saturation Voltage L14P1 Saturation Voltage L14P2

TEST CONDITIONS

SYMBOL MIN

UNITS

IC = 10 mA, Ee = 0

BVCEO

IE = 100 µA, Ee = 0

BVEBO

IC = 100 µA, Ee = 0

BVCBO

VCE = 12 V, Ee = 0

ICEO

Degrees

Ee = mW/cm2, VCE = 5 V 7,8

IC ON

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Datasheet ID: L14P1 634283