IPSH5N03LA G

IPSH5N03LA G Datasheet


IPDH5N03LA G IPSH5N03LA G

Part Datasheet
IPSH5N03LA G IPSH5N03LA G IPSH5N03LA G (pdf)
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IPDH5N03LA G IPDH5N03LA G IPDH5N03LA G
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Power-Transistor

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1 for target application
• N-channel, logic level
• Excellent gate charge x R DS on product FOM
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating RoHS compliant

IPDH5N03LA G IPSH5N03LA G

Product Summary V DS R DS on ,max SMD version ID
25 V 50 A

Type

IPDH5N03LA

IPSH5N03LA

Package Marking

P-TO252-3-11 H5N03LA

P-TO251-3-11 H5N03LA

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

Pulsed drain current

I D,pulse

T C=100 °C T C=25 °C3

Avalanche energy, single pulse

I D=45 A, R GS=25
dv /dt

I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1

Value 50 350 225
±20 83 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2008-04-14

IPDH5N03LA G IPSH5N03LA G

Parameter

Symbol Conditions
min.

Values typ.

Unit max.
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Datasheet ID: IPSH5N03LAG 638221