BFR 949L3 E6327
BFR 949L3 E6327 Datasheet
BFR949L3
| Part | Datasheet |
|---|---|
BFR 949L3 E6327 |
BFR 949L3 E6327 (pdf) |
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| NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 9 GHz, F = 1 dB at 1 GHz • Pb-free RoHS compliant package1 • Qualified according AEC Q101 * Short term description BFR949L3 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949L3 Marking Pin Configuration Package TSLP-3-1 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2 TS 101 °C Junction temperature Ambient temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Thermal Resistance Parameter Junction - soldering point3 RthJS 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb 3For calculation of RthJA please refer to Application Note Thermal Resistance Value 10 20 50 5 250 150 -65 150 -65 150 Value 195 Unit V mA mW °C Unit K/W 2007-04-26 BFR949L3 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 6 V, pulse measured V BR CEO 10 ICES 100 µA ICBO 100 nA IEBO |
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