IRFI740BTU

IRFI740BTU Datasheet

IRFW740B / IRFI740B

Part	Datasheet
IRFI740BTU	IRFI740BTU (pdf)

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IRFW740B / IRFI740B November 2001 IRFW740B / IRFI740B 400V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. • 10A, 400V, RDS on = = 10 V • Low gate charge typical 41 nC • Low Crss typical 35 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D2-PAK IRFW Series I2-PAK IRFI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ● ● IRFW740B / IRFI740B 400 10 40 ± 30 450 10 134 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter

PDF Datasheet Preview

IRFW740B / IRFI740B

November 2001

IRFW740B / IRFI740B
400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
• 10A, 400V, RDS on = = 10 V
• Low gate charge typical 41 nC
• Low Crss typical 35 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D2-PAK

IRFW Series

I2-PAK

IRFI Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, Tstg TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
● ●

IRFW740B / IRFI740B 400 10 40 ± 30 450 10 134
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter

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Datasheet ID: IRFI740BTU 634060