FF800R17KE3B2NOSA1
FF800R17KE3B2NOSA1 Datasheet
FF800R17KE3_B2
| Part | Datasheet |
|---|---|
FF800R17KE3B2NOSA1 |
FF800R17KE3B2NOSA1 (pdf) |
| PDF Datasheet Preview |
|---|
| IGBT-Module IGBT-modules FF800R17KE3_B2 Kollektor-Emitter-Sperrspannung Tvj = 25°C Kollektor-Dauergleichstrom TC = 80°C, Tvj = 150°C TC = 25°C, Tvj = 150°C tP = 1 ms Gesamt-Verlustleistung TC = 25°C, Tvj = 150°C Gate-Emitter-Spitzenspannung VCES IC nom IC ICRM Ptot VGES 1700 800 1200 1600 5,20 +/-20 Kollektor-Emitter-Sättigungsspannung IC = 800 A, VGE = 15 V IC = 800 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung IC = 32,0 mA, VCE = VGE, Tvj = 25°C Gateladung VGE = -15 V +15 V Tvj = 25°C Eingangskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom VCE = 1700 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25°C IC = 800 A, VCE = 900 V VGE = ±15 V RGon = 1,8 Tvj = 25°C Tvj = 125°C IC = 800 A, VCE = 900 V VGE = ±15 V RGon = 1,8 Tvj = 25°C Tvj = 125°C IC = 800 A, VCE = 900 V VGE = ±15 V RGoff = 2,2 Tvj = 25°C Tvj = 125°C IC = 800 A, VCE = 900 V VGE = ±15 V RGoff = 2,2 |
| More datasheets: PT-120-G-C11-MPC | PT-120-R-C11-MPD | PT-120-B-C11-EPB | PT-120-B-C11-EPA | PT-120-B-C11-EPC | PS5162EV | PS5164EV | PS5100EV | DVK90109 | LTW-206ZDCG-E2 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FF800R17KE3B2NOSA1 Datasheet file may be downloaded here without warranties.