PTFA071701FV4R250XTMA1

PTFA071701FV4R250XTMA1 Datasheet


PTFA071701E PTFA071701F

Part Datasheet
PTFA071701FV4R250XTMA1 PTFA071701FV4R250XTMA1 PTFA071701FV4R250XTMA1 (pdf)
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Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 770 MHz

PTFA071701E PTFA071701F

The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs PTFA071701E*
designed for use in cellular power amplifiers in the 725 to 770 MHz Package H-36248-2
frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide
ts excellent thermal performance and superior reliability.

PTFA071701F* Package H-37248-2

Intermodulation Distortion dBc Drain Efficiency %
duc Two-tone Drive-up o VDD = 30 V, IDQ = 900 mA,
= 765 MHz, tone spacing = 1 MHz
pr -20
d -30
ue -40
-45 Efficiency
in -50
t -55
n -65

Output Power, PEP dBm
60 55 50 45 40 35 30 25 20 15 54
disc RF Characteristics
• Thermally-enhanced packages, Pb-free and RoHS-compliant
• Broadband internal matching
• Typical CDMA2000 performance at 770 MHz, 30 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = dBc
• Typical CW performance, 770 MHz, 30 V - Output power at = 165 W - Efficiency = 62%
• Integrated ESD protection Human Body Model, Class 2 minimum
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR 30 V, 170 W CW output power

Two-carrier WCDMA Measurements not subject to production by design/characterization in Infineon test fixture

VDD = 30 V, IDQ = A, POUT = 40 W average, = 760, = 770 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = dB at CCDF

Characteristic

Symbol Min Typ

Unit

Gain

Drain Efficiency

Adjacent Channel Power Ratio

ACPR

All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.

ESD Electrostatic discharge sensitive handling precautions!

Data Sheet DRAFT ONLY
Ordering Information

Type and Version PTFA071701E V4 PTFA071701E V4 R250 PTFA071701F V4 PTFA071701F V4 R250

Package Type H-36248-2 H-36248-2 H-37248-2 H-37248-2

Package Description Slotted flange, single-ended Slotted flange, single-ended Earless flange, single-ended Earless flange, single-ended

Shipping Tray Tape & Reel 250 pcs Tray Tape & Reel 250 pcs
*See Infineon distributor for future availability. Data Sheet DRAFT ONLY
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Typical Performance data taken in a production test fixture

PTFA071701E PTFA071701F

Input Return Loss dB

Gain dB

Power Sweep, CW Conditions VDD = 30 V, IDQ = A, = 770 MHz

Broadband Performance VDD = 30 V, IDQ = 900 mA, POUT = 75 W
19 Gain 18

Efficiency
55 45 35 25 15 5 55

Drain Efficiency % Gain dB , Efficiency %
s 40 t 35 c 30 u 25 d 20 o 15 pr700

Efficiency

Gain 730
-15 Return Loss

Output Power dBm
inued CW Performance at Selected Voltages IDQ = A, = 770 MHz
nt 64

Gain
is 52

Frequency MHz

Power Sweep VDD = 30 V, = 770 MHz

IDQ = A IDQ = A

Gain dB Power Gain dB

VDD = 32 V

VDD = 30 V

Efficiency VDD = 28 V

IDQ = A IDQ = A

Output Power dBm

Output Power dBm

Drain Efficiency %

Data Sheet DRAFT ONLY
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Datasheet ID: PTFA071701FV4R250XTMA1 638495