PTFA071701EV4XWSA1
PTFA071701EV4XWSA1 Datasheet
PTFA071701E PTFA071701F
| Part | Datasheet |
|---|---|
PTFA071701EV4XWSA1 |
PTFA071701EV4XWSA1 (pdf) |
| Related Parts | Information |
|---|---|
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PTFA071701EV4R250XTMA1 |
PTFA071701EV4R250XTMA1 |
|
PTFA071701FV4R250XTMA1 |
PTFA071701FV4R250XTMA1 |
|
PTFA071701FV4XWSA1 |
PTFA071701FV4XWSA1 |
| PDF Datasheet Preview |
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| Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 770 MHz PTFA071701E PTFA071701F The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs PTFA071701E* designed for use in cellular power amplifiers in the 725 to 770 MHz Package H-36248-2 frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide ts excellent thermal performance and superior reliability. PTFA071701F* Package H-37248-2 Intermodulation Distortion dBc Drain Efficiency % duc Two-tone Drive-up o VDD = 30 V, IDQ = 900 mA, = 765 MHz, tone spacing = 1 MHz pr -20 d -30 ue -40 -45 Efficiency in -50 t -55 n -65 Output Power, PEP dBm 60 55 50 45 40 35 30 25 20 15 54 disc RF Characteristics • Thermally-enhanced packages, Pb-free and RoHS-compliant • Broadband internal matching • Typical CDMA2000 performance at 770 MHz, 30 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = dBc • Typical CW performance, 770 MHz, 30 V - Output power at = 165 W - Efficiency = 62% • Integrated ESD protection Human Body Model, Class 2 minimum • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR 30 V, 170 W CW output power Two-carrier WCDMA Measurements not subject to production by design/characterization in Infineon test fixture VDD = 30 V, IDQ = A, POUT = 40 W average, = 760, = 770 MHz, 3GPP signal, channel bandwidth = MHz, peak/average = dB at CCDF Characteristic Symbol Min Typ Unit Gain Drain Efficiency Adjacent Channel Power Ratio ACPR All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD Electrostatic discharge sensitive handling precautions! Data Sheet DRAFT ONLY Ordering Information Type and Version PTFA071701E V4 PTFA071701E V4 R250 PTFA071701F V4 PTFA071701F V4 R250 Package Type H-36248-2 H-36248-2 H-37248-2 H-37248-2 Package Description Slotted flange, single-ended Slotted flange, single-ended Earless flange, single-ended Earless flange, single-ended Shipping Tray Tape & Reel 250 pcs Tray Tape & Reel 250 pcs *See Infineon distributor for future availability. Data Sheet DRAFT ONLY 2 of 9 Confidential, Limited Internal Distribution Typical Performance data taken in a production test fixture PTFA071701E PTFA071701F Input Return Loss dB Gain dB Power Sweep, CW Conditions VDD = 30 V, IDQ = A, = 770 MHz Broadband Performance VDD = 30 V, IDQ = 900 mA, POUT = 75 W 19 Gain 18 Efficiency 55 45 35 25 15 5 55 Drain Efficiency % Gain dB , Efficiency % s 40 t 35 c 30 u 25 d 20 o 15 pr700 Efficiency Gain 730 -15 Return Loss Output Power dBm inued CW Performance at Selected Voltages IDQ = A, = 770 MHz nt 64 Gain is 52 Frequency MHz Power Sweep VDD = 30 V, = 770 MHz IDQ = A IDQ = A Gain dB Power Gain dB VDD = 32 V VDD = 30 V Efficiency VDD = 28 V IDQ = A IDQ = A Output Power dBm Output Power dBm Drain Efficiency % Data Sheet DRAFT ONLY 3 of 9 Confidential, Limited Internal Distribution |
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