IRFU220BTU-AM002

IRFU220BTU-AM002 Datasheet

IRFR220B / IRFU220B

Part	Datasheet
IRFU220BTU-AM002	IRFU220BTU-AM002 (pdf)

Related Parts	Information
IRFR220BTM_FP001	IRFR220BTM_FP001
IRFU220BTU_FP001	IRFU220BTU_FP001
IRFU220BTU_F080	IRFU220BTU_F080

PDF Datasheet Preview
IRFR220B / IRFU220B November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. • 4.6A, 200V, RDS on = = 10 V • Low gate charge typical 12 nC • Low Crss typical 10 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability D-PAK IRFR Series I-PAK IRFU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ● ● IRFR220B / IRFU220B 200 18 ± 30 65 40 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

PDF Datasheet Preview

IRFR220B / IRFU220B

November 2001

IRFR220B / IRFU220B
200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
• 4.6A, 200V, RDS on = = 10 V
• Low gate charge typical 12 nC
• Low Crss typical 10 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

D-PAK

IRFR Series

I-PAK

IRFU Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, Tstg TL

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
● ●

IRFR220B / IRFU220B 200 18 ± 30 65 40
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRFU220BTU-AM002 Datasheet file may be downloaded here without warranties.

Datasheet ID: IRFU220BTU-AM002 634052