SSH22N50A

SSH22N50A Datasheet

SSH22N50A

Part	Datasheet
SSH22N50A	SSH22N50A (pdf)

PDF Datasheet Preview
3RZHU 026 7 SSH22N50A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10µA Max. VDS = 500V Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25°C Continuous Drain Current TC=100°C Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25°C Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient BVDSS = 500 V RDS on = ID = 22 A TO-3P 1.Gate Drain Source Value 500 22 88 ±30 2151 22 278 - 55 to +150 Units V A V mJ A mJ V/ns W/°C Typ. -- Max. Units °C/W 1999 Fairchild Semiconductor Corporation SSH22N50A 32 5 026 7 Electrical Characteristics TC=25°C unless otherwise specified Symbol BVDSS VGS th

PDF Datasheet Preview

3RZHU 026 7

SSH22N50A

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10µA Max. VDS = 500V Lower RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID

IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25°C

Continuous Drain Current TC=100°C

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25°C Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

Thermal Resistance

Characteristic Junction-to-Case

Case-to-Sink Junction-to-Ambient

BVDSS = 500 V RDS on = ID = 22 A

TO-3P
1.Gate Drain Source

Value 500 22 88 ±30 2151 22 278
- 55 to +150

Units V

A V mJ A mJ V/ns W/°C

Typ. --

Max.

Units °C/W
1999 Fairchild Semiconductor Corporation

SSH22N50A
32 5 026 7

Electrical Characteristics TC=25°C unless otherwise specified

Symbol BVDSS

VGS th

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived SSH22N50A Datasheet file may be downloaded here without warranties.

Datasheet ID: SSH22N50A 634784