IRFM220BTF_FP001

IRFM220BTF_FP001 Datasheet

IRFM220B

Part	Datasheet
IRFM220BTF_FP001	IRFM220BTF_FP001 (pdf)

PDF Datasheet Preview
IRFM220B November 2001 IRFM220B 200V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. • 1.13A, 200V, RDS on = = 10 V • Low gate charge typical 12 nC • Low Crss typical 10 pF • Fast switching • Improved dv/dt capability G SOT-223 IRFM Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 70°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient * * When mounted on the minimum pad size recommended PCB Mount IRFM220B 200 ± 30 65 -55 to +150 Units V A V mJ A mJ V/ns W W/°C °C Units °C/W 2001 Fairchild Semiconductor Corporation

PDF Datasheet Preview

IRFM220B

November 2001

IRFM220B
200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
• 1.13A, 200V, RDS on = = 10 V
• Low gate charge typical 12 nC
• Low Crss typical 10 pF
• Fast switching
• Improved dv/dt capability

G SOT-223

IRFM Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 70°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Thermal Resistance, Junction-to-Ambient *
* When mounted on the minimum pad size recommended PCB Mount

IRFM220B 200 ± 30 65
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W
2001 Fairchild Semiconductor Corporation

More datasheets: 1N829A (DO35) | 1N826 | 1N827 | 1N829A | QED422 | QED423 | 308N250 | SI9435DY | IXBF12N300 | APT40DQ100BCTG

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IRFM220BTF_FP001 Datasheet file may be downloaded here without warranties.

Datasheet ID: IRFM220BTF_FP001 634042