SI9435DY
SI9435DY Datasheet
Si9435DY
| Part | Datasheet |
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SI9435DY |
SI9435DY (pdf) |
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| Si9435DY January 2001 Si9435DY P-Channel Logic Level MOSFET This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • DC/DC converter • Load switch • Motor Drive • A, V. RDS ON = 50 VGS = V RDS ON = 80 VGS = V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size 9435 Si9435DY 13’’ 5 6 7 8 Ratings ±20 -20 -55 to +150 50 25 Tape width 12mm 4 3 2 1 Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor International Si9435DY Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = µA ID = µA, Referenced to 25°C VDS = V, VGS = 20 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient |
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