QED422

QED422 Datasheet

QED422, QED423 Plastic Infrared Light Emitting Diode

Part	Datasheet
QED422	QED422 (pdf)

Related Parts	Information
QED423	QED423

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QED422, QED423 Plastic Infrared Light Emitting Diode August 2005 QED422, QED423 Plastic Infrared Light Emitting Diode • λ= 880 nm • Chip material = AlGaAs • Package type Plastic TO-46 • Matched Photosensor QSD722/723/724 • Medium Wide Emission Angle, 30° • High Output Power • Package material and color clear, purple tinted, plastic Package Dimensions The QED422/423 is an 880 nm AlGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. REFERENCE SURFACE CATHODE NOM Ø 45° SQ. 2X NOTES Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal dimensions unless otherwise Schematic ANODE CATHODE 2005 Fairchild Semiconductor Corporation QED422, QED423 Plastic Infrared Light Emitting Diode Absolute Maximum Ratings TA = 25°C unless otherwise Parameter TOPR T STG TSOL-I TSOL-F IF VR PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 100 5 Notes Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16" mm minimum from housing Unit °C °C °C °C mA V mW Electrical/Optical Characteristics TA =25°C Parameter Test Conditions Symbol IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA λPE 2 Θ 1/2 VF IR IE tr tf 10 20 880 30 800 10 40 Units nm Deg. V µA mW/sr mW/sr ns

PDF Datasheet Preview

QED422, QED423 Plastic Infrared Light Emitting Diode

August 2005

QED422, QED423 Plastic Infrared Light Emitting Diode
• λ= 880 nm
• Chip material = AlGaAs
• Package type Plastic TO-46
• Matched Photosensor QSD722/723/724
• Medium Wide Emission Angle, 30°
• High Output Power
• Package material and color clear, purple tinted, plastic

Package Dimensions

The QED422/423 is an 880 nm AlGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package.

REFERENCE SURFACE

CATHODE

NOM Ø
45°

SQ. 2X

NOTES Dimensions for all drawings are in inches mm . Tolerance of ± on all non-nominal
dimensions unless otherwise

Schematic

ANODE CATHODE
2005 Fairchild Semiconductor Corporation

QED422, QED423 Plastic Infrared Light Emitting Diode

Absolute Maximum Ratings TA = 25°C unless otherwise

Parameter

TOPR T STG TSOL-I TSOL-F

IF VR PD

Rating
-40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec
100 5

Notes Derate power dissipation linearly mW/°C above 25°C. RMA flux is recommended. Methanol or isopropyl alcohols are recommended as cleaning agents. Soldering iron 1/16" mm minimum from housing

Unit
°C °C °C °C mA V mW

Electrical/Optical Characteristics TA =25°C

Parameter

Test Conditions Symbol

IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms

VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms

IF = 100 mA
λPE 2 Θ 1/2

VF IR IE tr tf
10 20
880 30 800
10 40

Units
nm Deg.

V µA mW/sr mW/sr ns

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Datasheet ID: QED422 634515