IXBF12N300
IXBF12N300 Datasheet
IXBF12N300
| Part | Datasheet |
|---|---|
IXBF12N300 |
IXBF12N300 (pdf) |
| PDF Datasheet Preview |
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| High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Electrically Isolated Tab IXBF12N300 VCES = IC110 = VCE sat 3000V 11A 3.2V Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA RBSOA TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 20Ω Clamped Inductive Load TJ TJM Tstg TL TSOLD FC VISOL Weight TC = 25°C 1.6mm in. from Case for 10s Plastic Body for 10 seconds Mounting Force 50/60Hz, 1 Minute Maximum Ratings 3000 3000 ± 20 ± 30 ICM = 98 1500 -55 +150 -55 +150 / 4000 Nm/lb.in. V~ Symbol Test Conditions TJ = 25°C Unless Otherwise Specified Characteristic Values Min. Typ. Max. BVCES IC = 250uA, VGE = 0V 3000 VGE th IC = 250uA, VCE = VGE ICES VCE = • VCES, VGE = 0V Note 2, TJ = 125°C 25 uA 1 mA IGES VCE = 0V, VGE = ± 20V ±100 nA VCE sat |
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