IRF740B

IRF740B Datasheet

IRF740B/IRFS740B

Part	Datasheet
IRF740B	IRF740B (pdf)

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IRF740B/IRFS740B November 2001 IRF740B/IRFS740B 400V N-Channel MOSFET These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. • 10A, 400V, RDS on = = 10 V • Low gate charge typical 41 nC • Low Crss typical 35 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability TO-220 IRF Series TO-220F IRFS Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature IRF740B IRFS740B ± 30 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

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IRF740B/IRFS740B

November 2001

IRF740B/IRFS740B
400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
• 10A, 400V, RDS on = = 10 V
• Low gate charge typical 41 nC
• Low Crss typical 35 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220

IRF Series

TO-220F

IRFS Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature

IRF740B

IRFS740B
± 30
-55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient

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Datasheet ID: IRF740B 634030