HGT1S20N60A4S9A

HGT1S20N60A4S9A Datasheet

HGT1S20N60A4S9A

Part	Datasheet
HGT1S20N60A4S9A	HGT1S20N60A4S9A (pdf)

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Data Sheet HGT1S20N60A4S9A March 2006 600V, SMPS Series N-Channel IGBTs The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49339. Ordering Information PACKAGE BRAND HGT1S20N60A4S9A TO-263AB 20N60A4 NOTE When ordering, use the entire part number. • >100kHz Operation at 390V, 20A • 200kHz Operation at 390V, 12A • 600V Switching SOA Capability • Typical Fall Time. 55ns at TJ = 125oC • Low Conduction Loss • Temperature Compensating SABER Model • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards Packaging JEDEC TO-263AB COLLECTOR FLANGE FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606

PDF Datasheet Preview

Data Sheet

HGT1S20N60A4S9A

March 2006
600V, SMPS Series N-Channel IGBTs

The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49339.
Ordering Information

PACKAGE

BRAND

HGT1S20N60A4S9A

TO-263AB
20N60A4
NOTE When ordering, use the entire part number.
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. 55ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER Model
• Related Literature - TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-263AB

COLLECTOR FLANGE

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606

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Datasheet ID: HGT1S20N60A4S9A 633892