IRGS4B60KPBF
IRGS4B60KPBF Datasheet
IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF
| Part | Datasheet |
|---|---|
IRGS4B60KPBF |
IRGS4B60KPBF (pdf) |
| PDF Datasheet Preview |
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| INSULATED GATE BIPOLAR TRANSISTOR • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF VCES = 600V IC = 6.8A, TC=100°C tsc > 10µs, TJ=150°C VCE on typ. = 2.1V TO-220 D2Pak TO-262 IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC TC = 25°C Continuous Collector Current IC TC = 100°C Continuous Collector Current ICM ILM Pulse Collector Current Ref.Fig.C.T.5 c Clamped Inductive Load current Gate-to-Emitter Voltage PD TC = 25°C Maximum Power Dissipation PD TC = 100°C Maximum Power Dissipation Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Thermal / Mechanical Characteristics Parameter Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient d Junction-to-Ambient PCB Mount, steady state Weight Max. 600 12 24 ±20 63 31 -55 to +175 300 in. 1.6mm from case |
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