HUF76633S3ST-F085
HUF76633S3ST-F085 Datasheet
HUF76633S3ST_F085 N-Channel Logic Level UltraFET Power MOSFET
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HUF76633S3ST-F085 |
HUF76633S3ST-F085 (pdf) |
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| HUF76633S3ST_F085 N-Channel Logic Level UltraFET Power MOSFET HUF76633S3ST_F085 N-Channel Logic Level Power MOSFET 100V, 39A, 35mΩ - Typ rDS on = 28mΩ at VGS = 10V, ID = 39A - Typ Qg tot = 56nC at VGS = 10V, ID = 20A - UIS Capability - RoHS Compliant - Qualified to AEC Q101 - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Distributed Power Architectures and VRM - Primary Switch for 12V Systems TO-263AB April 2013 MOSFET Maximum Ratings TJ = 25°C unless otherwise noted Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous VGS=10 Note 1 Pulsed Drain Current Single Pulse Avalanche Energy Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TC = 25°C TC = 25°C Note 2 Note 3 Ratings 100 ±16 39 See Figure4 267 183 -55 to + 175 43 Units V mJ W/oC/W oC/W Package Marking and Ordering Information Device Marking Device HUF76633S3ST HUF76633S3ST_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units 1 Current is limited by bondwire configuration. 2 Starting TJ = 25°C, L = 0.55mH, IAS = 31.2A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche 3 is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface presented here is hile determined user's board design. The maximum rating 2013 Fairchild Semiconductor Corporation HUF76633S3ST_F085 N-Channel Logic Level UltraFET Power MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Off Characteristics Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage IDSS Drain to Source Leakage Current IGSS Gate to Source Leakage Current On Characteristics ID = 250uA, VGS = 0V VDS=100V, TJ = 25oC VGS = 0V TJ = 175oC Note 4 VGS = ±16V ±100 nA VGS th Gate to Source Threshold Voltage rDS on Drain to Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250uA ID = 39A, |
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