MRF9135LR3

MRF9135LR3 Datasheet

Document Number MRF9135L Rev. 7, 8/2005

Part	Datasheet
MRF9135LR3	MRF9135LR3 (pdf)

Related Parts	Information
MRF9135LSR3	MRF9135LSR3

PDF Datasheet Preview
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical N - CDMA Performance 880 MHz, 26 Volts, IDQ = 1100 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 25 Watts Avg. Power Gain dB Efficiency 25% Adjacent Channel Power 750 kHz - 47 dBc 30 kHz BW • Internally Matched, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, 26 Vdc, 880 MHz, 135 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads, Nominal. • Pb - Free and RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MRF9135LR3 MRF9135LSR3 880 MHz, 135 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF9135LR3 Table Maximum Ratings CASE 465A - 06, STYLE 1 NI - 780S MRF9135LSR3 Rating Value Drain - Source Voltage Gate - Source Voltage Total Device Dissipation TC = 25°C Derate above 25°C VDSS VGS PD - +65 - +15 Storage Temperature Range Operating Junction Temperature Table Thermal Characteristics Characteristic Tstg TJ - 65 to +200 Value 1 Thermal Resistance, Junction to Case Table ESD Protection Characteristics Test Conditions Class Human Body Model 1 Minimum Machine Model M2 Minimum Charge Device Model C7 Minimum MTTF calculator available at Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. Unit Vdc W/°C °C °C Unit °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., All rights reserved.

PDF Datasheet Preview

Freescale Semiconductor Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical N - CDMA Performance 880 MHz, 26 Volts, IDQ = 1100 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 25 Watts Avg. Power Gain dB Efficiency 25% Adjacent Channel Power 750 kHz - 47 dBc 30 kHz BW
• Internally Matched, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, 26 Vdc, 880 MHz, 135 Watts CW

Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, Nominal.
• Pb - Free and RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

MRF9135LR3 MRF9135LSR3
880 MHz, 135 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs

CASE 465 - 06, STYLE 1 NI - 780

MRF9135LR3

Table Maximum Ratings

CASE 465A - 06, STYLE 1 NI - 780S

MRF9135LSR3

Rating

Value

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation TC = 25°C Derate above 25°C

VDSS VGS PD
- +65
- +15

Storage Temperature Range Operating Junction Temperature Table Thermal Characteristics

Characteristic

Tstg TJ
- 65 to +200

Value 1

Thermal Resistance, Junction to Case Table ESD Protection Characteristics

Test Conditions

Class

Human Body Model
1 Minimum

Machine Model

M2 Minimum

Charge Device Model

C7 Minimum

MTTF calculator available at Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product.

Unit Vdc W/°C °C °C

Unit °C/W

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

Freescale Semiconductor, Inc., All rights reserved.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MRF9135LR3 Datasheet file may be downloaded here without warranties.

Datasheet ID: MRF9135LR3 635608