NDS9410A

NDS9410A Datasheet

NDS9410A

Part	Datasheet
NDS9410A	NDS9410A (pdf)

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NDS9410A April 2000 NDS9410A Single N-Channel Enhancement Mode Field Effect Transistor This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed. • A, 30 V. RDS ON = 28 VGS = 10 V RDS ON = 42 VGS = V • High performance trench technology for extremely low RDS ON • High power and current handling capability in a widely used surface mount package. SO-8 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1 Package Marking and Ordering Information Device Marking Device Reel Size NDS9410A NDS9410A 13’’ 5 6 7 8 Ratings 30 ±20 -55 to +150 50 25 Tape width 12mm 4 3 2 1 Units °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation NDS9410A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static ID on

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NDS9410A

April 2000

NDS9410A

Single N-Channel Enhancement Mode Field Effect Transistor

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
• A, 30 V.

RDS ON = 28 VGS = 10 V RDS ON = 42 VGS = V
• High performance trench technology for extremely low RDS ON
• High power and current handling capability in a widely used surface mount package.

SO-8

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1
Package Marking and Ordering Information

Device Marking

Device

Reel Size

NDS9410A

NDS9410A
13’’
5 6 7 8

Ratings
30 ±20 -55 to +150
50 25

Tape width 12mm
4 3 2 1

Units
°C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

NDS9410A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

VGS = 0 V, ID = 250 µA

ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = V VDS = 0 V

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

ID on

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Datasheet ID: NDS9410A 521870