FQP9N25CTSTU

FQP9N25CTSTU Datasheet

FQP9N50C / FQPF9N50C N-Channel MOSFET

Part	Datasheet
FQP9N25CTSTU	FQP9N25CTSTU (pdf)

Related Parts	Information
FQP9N25C	FQP9N25C

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FQP9N50C / FQPF9N50C N-Channel MOSFET FQP9N25C / FQPF9N25C N-Channel MOSFET 250 V, A, 430 March 2013 This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. • A, 250 V, RDS on =430 V, ID=4.4 A • Low Gate Charge Typ. nC • Low Crss Typ. pF • 100% Avalanche Tested TO-220 TO-220F ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. FQP9N25C FQPF9N25C ± 30 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP9N25C

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FQP9N50C / FQPF9N50C N-Channel MOSFET

FQP9N25C / FQPF9N25C

N-Channel MOSFET
250 V, A, 430

March 2013

This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts.
• A, 250 V, RDS on =430 V, ID=4.4 A
• Low Gate Charge Typ. nC
• Low Crss Typ. pF
• 100% Avalanche Tested

TO-220

TO-220F
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

FQP9N25C FQPF9N25C
± 30
-55 to +150

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient

FQP9N25C

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Datasheet ID: FQP9N25CTSTU 515368