AO4478L
AO4478L Datasheet
AO4478L N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AO4478L |
AO4478L (pdf) |
| PDF Datasheet Preview |
|---|
| AO4478L N-Channel Enhancement Mode Field Effect Transistor The AO4478L uses advanced trench technology to provide excellent RDS ON , low gate charge. This device is suitable for use as general puspose, PWM and a load switch applications. -RoHS Compliant -Halogen Free VDS V = 30V ID = 9A VGS = 10V RDS ON VGS = 10V RDS ON VGS = 4.5V 100% UIS Tested! 100% Rg Tested! SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mHC Power DissipationB TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±25 60 17 14 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Maximum Junction-to-Lead C t 10s Steady-State 31 59 Steady-State Max 40 75 24 Units V mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO4478L Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS th ID ON Gate-Body leakage current Gate Threshold Voltage On state drain current |
| More datasheets: TISP2290F3DR-S | TISP2320F3DR-S | TISP2260F3DR-S | BCX20 | W201132C205AQ | W200132C205AQ | 74ABT16543CMTDX | 74ABT16543CSSCX | 74ABT16543CSSC | 74ABT16543CMTD |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AO4478L Datasheet file may be downloaded here without warranties.