AO4478L

AO4478L Datasheet


AO4478L N-Channel Enhancement Mode Field Effect Transistor

Part Datasheet
AO4478L AO4478L AO4478L (pdf)
PDF Datasheet Preview
AO4478L N-Channel Enhancement Mode Field Effect Transistor

The AO4478L uses advanced trench technology to provide excellent RDS ON , low gate charge. This device is suitable for use as general puspose, PWM and a load switch applications.
-RoHS Compliant -Halogen Free

VDS V = 30V ID = 9A VGS = 10V RDS ON VGS = 10V RDS ON VGS = 4.5V
100% UIS Tested! 100% Rg Tested!

SOIC-8

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current

TA=70°C

Pulsed Drain Current C

Avalanche Current C

Repetitive avalanche energy L=0.1mHC

Power DissipationB

TA=25°C TA=70°C

Junction and Storage Temperature Range

TJ, TSTG

Maximum 30 ±25 60 17 14
-55 to 150

Thermal Characteristics

Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Maximum Junction-to-Lead C
t 10s Steady-State
31 59

Steady-State

Max 40 75 24

Units V
mJ W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO4478L

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS VGS th ID ON

Gate-Body leakage current Gate Threshold Voltage On state drain current
More datasheets: TISP2290F3DR-S | TISP2320F3DR-S | TISP2260F3DR-S | BCX20 | W201132C205AQ | W200132C205AQ | 74ABT16543CMTDX | 74ABT16543CSSCX | 74ABT16543CSSC | 74ABT16543CMTD


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived AO4478L Datasheet file may be downloaded here without warranties.

Datasheet ID: AO4478L 516176