BCX20

BCX20 Datasheet

BCX20 NPN Epitaxial Silicon Transistor

Part	Datasheet
BCX20	BCX20 (pdf)

PDF Datasheet Preview
BCX20 NPN Epitaxial Silicon Transistor BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications January 2005 1 SOT-23 Marking U2 Base Emitter Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCES VCEO VEBO IC PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Dissipation Junction Temperature Storage Temperature Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions BVCEO BVCES BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE sat VBE on Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 10mA, IB = 0 IC = 100µA, VBE = 0 IE = 10µA, IC = 0 VCE = 20V, VBE = 0 VBE =5V, IC = 0 VCE = 1V, IC = 100mA VCE = 1V, IC = 300mA VCE = 1V, IC = 500mA IC = 500mA, IB = 50mA VCE = 1A, IB = 500mA Value 30 25 5 800 310 150 -65 ~ 150 Min. 25 30 5 100 70 40 Units V A W °C °C 100 10 600 Units 2005 Fairchild Semiconductor Corporation BCX20 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-23 Dimensions in Millimeters TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx IntelliMAX ActiveArray FASTr ISOPLANAR Power247 Stealth Bottomless FPS

PDF Datasheet Preview

BCX20 NPN Epitaxial Silicon Transistor

BCX20

NPN Epitaxial Silicon Transistor

Switching and Amplifier Applications

January 2005
1 SOT-23 Marking U2

Base Emitter Collector

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Parameter

VCES VCEO VEBO IC PC TJ TSTG

Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Dissipation Junction Temperature Storage Temperature

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Conditions

BVCEO BVCES BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE sat VBE on

Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current DC Current Gain

Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

IC = 10mA, IB = 0 IC = 100µA, VBE = 0 IE = 10µA, IC = 0 VCE = 20V, VBE = 0 VBE =5V, IC = 0 VCE = 1V, IC = 100mA VCE = 1V, IC = 300mA VCE = 1V, IC = 500mA IC = 500mA, IB = 50mA VCE = 1A, IB = 500mA

Value
30 25 5 800 310 150 -65 ~ 150

Min.
25 30 5
100 70 40

Units

V A W °C °C
100 10 600

Units
2005 Fairchild Semiconductor Corporation

BCX20 NPN Epitaxial Silicon Transistor

Mechanical Dimensions

SOT-23

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx

IntelliMAX

ActiveArray FASTr

ISOPLANAR

Power247

Stealth

Bottomless FPS

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BCX20 Datasheet file may be downloaded here without warranties.

Datasheet ID: BCX20 513510