FQP6N60C

FQP6N60C Datasheet


FQP6N60C/FQPF6N60C

Part Datasheet
FQP6N60C FQP6N60C FQP6N60C (pdf)
Related Parts Information
FQPF6N60C FQPF6N60C FQPF6N60C
FQP6N60C_F080 FQP6N60C_F080 FQP6N60C_F080
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FQP6N60C/FQPF6N60C

FQP6N60C/FQPF6N60C
600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
• 5.5A, 600V, RDS on = = 10 V
• Low gate charge typical 16 nC
• Low Crss typical 7 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

TO-220

FQP Series

TO-220F

FQPF Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.

FQP6N60C FQPF6N60C
± 30
-55 to +150

Units V A V mJ A mJ

V/ns W

W/°C °C
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Datasheet ID: FQP6N60C 515348