AON7702

AON7702 Datasheet

AON7702

Part	Datasheet
AON7702	AON7702 (pdf)

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AON7702 30V N-Channel MOSFET SRFET TM Product Summary SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V 30V 37A < < 100% UIS Tested 100% Rg Tested Top View DFN 3x3A Bottom View Pin 1 Top View SRFETTM Soft Recovery MOSFET Integrated Schottky Diode Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25°C TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 37 23 80 11 19 18 23 9 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State 30 60 Maximum Junction-to-Case Steady-State

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AON7702
30V N-Channel MOSFET

SRFET TM

Product Summary

SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

VDS ID at VGS=10V RDS ON at VGS=10V RDS ON at VGS = 4.5V
30V 37A < <
100% UIS Tested 100% Rg Tested

Top View

DFN 3x3A Bottom View

Pin 1

Top View

SRFETTM Soft Recovery MOSFET Integrated Schottky Diode

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

TC=25°C TC=100°C

Pulsed Drain Current C

Continuous Drain

TA=25°C

Current

TA=70°C

Avalanche Current C

Avalanche energy L=0.1mH C

IDSM

IAS, IAR EAS, EAR

TC=25°C Power Dissipation B TC=100°C

TA=25°C Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum 30 ±20 37 23 80 11 19 18 23 9 2
-55 to 150

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient A t 10s Maximum Junction-to-Ambient A D Steady-State
30 60

Maximum Junction-to-Case

Steady-State

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Datasheet ID: AON7702 516279