FJV3108RMTF
FJV3108RMTF Datasheet
FJV3108R
| Part | Datasheet |
|---|---|
FJV3108RMTF |
FJV3108RMTF (pdf) |
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| FJV3108R FJV3108R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor • Complement to FJV4108R Marking NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO ICBO hFE VCE sat fT Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance IC=10µA, IE=0 IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1.0MHz VI off VI on R1/R2 Input Off Voltage Input On Voltage Input Resistor Ratio VCE=5V, IC=100µA VCE=0.3V, IC=2mA 2 1 SOT-23 Base Emitter Collector Equivalent Circuit C Value 50 10 100 200 150 -55 ~ 150 Units V mA mW °C °C Min. 50 56 Typ. Max. Units V µA 2002 Fairchild Semiconductor Corporation FJV3108R Typical Characteristics 1000 100 VCE = 5V R1 = 47K R2 = 22K hFE, DC CURRENT GAIN IC [µA], COLLECTOR CURRENT 1000 IC[mA], COLLECTOR CURRENT Figure DC current Gain VCE = 5V 1000 |
| More datasheets: SRR-LAB1 | SRR-LAB2 | 333-2USOC/S400-A8 | 10922F | BD898-S | BD902-S | A6801SEP-T | A6800SL-T | A6801SA-T | A6801SLW-T |
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