FJV3108RMTF

FJV3108RMTF Datasheet


FJV3108R

Part Datasheet
FJV3108RMTF FJV3108RMTF FJV3108RMTF (pdf)
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FJV3108R

FJV3108R

Switching Application Bias Resistor Built In
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor
• Complement to FJV4108R

Marking

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO ICBO hFE VCE sat fT Cob

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance

IC=10µA, IE=0 IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1.0MHz

VI off VI on R1/R2

Input Off Voltage Input On Voltage Input Resistor Ratio

VCE=5V, IC=100µA VCE=0.3V, IC=2mA
2 1 SOT-23 Base Emitter Collector

Equivalent Circuit C

Value 50 10 100 200 150
-55 ~ 150

Units V mA
mW °C °C

Min. 50 56

Typ.

Max.

Units V µA
2002 Fairchild Semiconductor Corporation

FJV3108R

Typical Characteristics
1000 100

VCE = 5V R1 = 47K R2 = 22K
hFE, DC CURRENT GAIN

IC [µA], COLLECTOR CURRENT
1000

IC[mA], COLLECTOR CURRENT

Figure DC current Gain

VCE = 5V
1000
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Datasheet ID: FJV3108RMTF 514794