FQP5P20

FQP5P20 Datasheet

FQP5P20

Part	Datasheet
FQP5P20	FQP5P20 (pdf)

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FQP5P20 FQP5P20 200V P-Channel MOSFET May 2000 QFETTM These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. • -4.8A, -200V, RDS on = = -10 V • Low gate charge typical 10 nC • Low Crss typical 12 pF • Fast switching • 100% avalanche tested TO-220 FQP Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient ● ● FQP5P20 -200 ± 30 330 75 -55 to +150 2000 Fairchild Semiconductor International Units V A V mJ A mJ V/ns W W/°C °C °C Units °C/W °C/W °C/W

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FQP5P20

FQP5P20
200V P-Channel MOSFET

May 2000

QFETTM

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
• -4.8A, -200V, RDS on = = -10 V
• Low gate charge typical 10 nC
• Low Crss typical 12 pF
• Fast switching
• 100% avalanche tested

TO-220

FQP Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
● ●

FQP5P20 -200 ± 30 330 75
-55 to +150
2000 Fairchild Semiconductor International

Units V A V mJ A mJ

V/ns W

W/°C °C °C

Units °C/W °C/W °C/W

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Datasheet ID: FQP5P20 515340