2N5950

2N5950 Datasheet

2N5950 N-Channel RF Amplifier

Part	Datasheet
2N5950	2N5950 (pdf)

Related Parts	Information
2N5950_J18Z	2N5950_J18Z
2N5950_J35Z	2N5950_J35Z

PDF Datasheet Preview
2N5950 N-Channel RF Amplifier September 2007 2N5950 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process TO-92 Gate Source Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 30 -30 10 -55 ~ 150 Max. 350 125 357 Units V mA °C Units mW/°C °C/W °C/W 2007 Fairchild Semiconductor Corporation 2N5950 N-Channel RF Amplifier Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V BR GSS IGSS VGS off VGS f VGS Gate-Source Cut-off Voltage Gate-Source Forward Voltage Gate-Source Forward Voltage On Characteristics IDSS RDS on Zero-Gate Voltage Drain Current Drain-Source On Resistance Small Signal Characteristics Forward Transferconductance Ciss

PDF Datasheet Preview

2N5950 N-Channel RF Amplifier

September 2007
2N5950 N-Channel RF Amplifier
• This device is designed primarily for electronic switching applications such as low on resistance analog switching.
• Sourced from process

TO-92

Gate Source Drain

Absolute Maximum Ratings* Ta=25°C unless otherwise noted

VDG VGS IGF TJ, TSTG

Parameter

Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics Ta=25°C unless otherwise noted

Parameter

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Value
30 -30 10 -55 ~ 150

Max.
350 125 357

Units

V mA °C

Units
mW/°C °C/W °C/W
2007 Fairchild Semiconductor Corporation
2N5950 N-Channel RF Amplifier

Electrical Characteristics* Ta=25°C unless otherwise noted

Parameter

Test Condition

Min. Max. Units

Off Characteristics

V BR GSS IGSS

VGS off VGS f VGS

Gate-Source Cut-off Voltage Gate-Source Forward Voltage Gate-Source Forward Voltage

On Characteristics
*IDSS RDS on

Zero-Gate Voltage Drain Current * Drain-Source On Resistance

Small Signal Characteristics

Forward Transferconductance

Ciss

More datasheets: ATA2745M-TCQY | 1856 | FFPF40U60STU | 5638D1 | 1N4154_T50R | 1N4154 | 1N4154TR | 1N4154TR_S00Z | CFRMT103-HF | 2N5950_J18Z

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 2N5950 Datasheet file may be downloaded here without warranties.

Datasheet ID: 2N5950 513006