1N4154_T50R

1N4154_T50R Datasheet

1N4154 High Conductance Fast Diode

Part	Datasheet
1N4154_T50R	1N4154_T50R (pdf)

Related Parts	Information
1N4154	1N4154
1N4154TR	1N4154TR
1N4154TR_S00Z	1N4154TR_S00Z

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1N4154 High Conductance Fast Diode 1N4154 High Conductance Fast Diode July 2009 • 500 milliwatt Power Dissipation package. • Fast Switching Speed. • Typical capacitance less than picofarad. The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Parameter Value Unit WIV IO IF surge Working Inverse Voltage Average Rectified Current DC Forward Current IF Recurrent Peak Forward Current IF Peak Forward Surge Current IFSM Pulse Width = second Pulse Width = microsecond TSTG Storage Temperature Range -65 to +200 Operating Junction Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol PD Parameter Total Power Dissipation at TA = 25°C Linear Derating Factor from TA = 25°C Thermal Resistance, Junction to Ambient Value Unit mW/°C °C/W 2009 Fairchild Semiconductor Corporation 1N4154 High Conductance Fast Diode Electrical Characteristics TA = 25°C unless otherwise noted Parameter Conditions Breakdown Voltage Forward Voltage Capacitance IR = 5.0µA VR = 25V VR = 25V, TA = 150°C IF = 30mA VR = 0, f = 1.0MHz

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1N4154 High Conductance Fast Diode
1N4154 High Conductance Fast Diode

July 2009
• 500 milliwatt Power Dissipation package.
• Fast Switching Speed.
• Typical capacitance less than picofarad.

The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

DO-35

Color Band Denotes Cathode

Absolute Maximum Ratings * TA = 25°C unless otherwise noted

Parameter

Value

Unit

WIV IO IF surge

Working Inverse Voltage

Average Rectified Current

DC Forward Current IF Recurrent Peak Forward Current IF Peak Forward Surge Current IFSM

Pulse Width = second Pulse Width = microsecond

TSTG

Storage Temperature Range
-65 to +200

Operating Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics

Symbol PD

Parameter

Total Power Dissipation at TA = 25°C Linear Derating Factor from TA = 25°C Thermal Resistance, Junction to Ambient

Value

Unit
mW/°C
°C/W
2009 Fairchild Semiconductor Corporation
1N4154 High Conductance Fast Diode

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Conditions

Breakdown Voltage

Forward Voltage

Capacitance

IR = 5.0µA

VR = 25V VR = 25V, TA = 150°C

IF = 30mA

VR = 0, f = 1.0MHz

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Datasheet ID: 1N4154_T50R 512984