2N5950_J35Z
2N5950_J35Z Datasheet
2N5950 N-Channel RF Amplifier
| Part | Datasheet |
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2N5950_J35Z |
2N5950_J35Z (pdf) |
| Related Parts | Information |
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2N5950_J18Z |
2N5950_J18Z |
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2N5950 |
2N5950 |
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| 2N5950 N-Channel RF Amplifier September 2007 2N5950 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process TO-92 Gate Source Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These rating are based on a maximum junction temperature of 150 degrees C. 2 These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta=25°C unless otherwise noted Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 30 -30 10 -55 ~ 150 Max. 350 125 357 Units V mA °C Units mW/°C °C/W °C/W 2007 Fairchild Semiconductor Corporation 2N5950 N-Channel RF Amplifier Electrical Characteristics* Ta=25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V BR GSS IGSS VGS off VGS f VGS Gate-Source Cut-off Voltage Gate-Source Forward Voltage Gate-Source Forward Voltage On Characteristics *IDSS RDS on Zero-Gate Voltage Drain Current * Drain-Source On Resistance Small Signal Characteristics Forward Transferconductance Ciss |
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