FQPF6N40CT

FQPF6N40CT Datasheet

FQP6N40C / FQPF6N40C N-Channel MOSFET

Part	Datasheet
FQPF6N40CT	FQPF6N40CT (pdf)

Related Parts	Information
FQPF6N40CF	FQPF6N40CF
FQPF6N40C	FQPF6N40C

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FQP6N40C / FQPF6N40C N-Channel MOSFET FQP6N40C / FQPF6N40C N-Channel QFET MOSFET 400 V, A, March 2013 This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. • A, 400 V, RDS on = Max = 10 V, ID = A • Low Gate Charge Typ. 16 nC • Low Crss Typ. 15 pF • 100% Avalanche Tested TO-220 FQP Series TO-220F FQPF Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 VGSS Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 dv/dt Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature FQP6N40C FQPF6N40C ± 30 -55 to +150

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FQP6N40C / FQPF6N40C N-Channel MOSFET

FQP6N40C / FQPF6N40C

N-Channel QFET MOSFET
400 V, A,

March 2013

This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts.
• A, 400 V, RDS on = Max = 10 V, ID = A
• Low Gate Charge Typ. 16 nC
• Low Crss Typ. 15 pF
• 100% Avalanche Tested

TO-220

FQP Series

TO-220F

FQPF Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS

Drain-Source Voltage

Drain Current - Continuous TC = 25°C
- Continuous TC = 100°C

Drain Current - Pulsed

Note 1

VGSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1
dv/dt

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature

FQP6N40C FQPF6N40C
± 30
-55 to +150

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Datasheet ID: FQPF6N40CT 515275