FQNL1N50BBU

FQNL1N50BBU Datasheet

FQNL1N50B

Part	Datasheet
FQNL1N50BBU	FQNL1N50BBU (pdf)

Related Parts	Information
FQNL1N50BTA	FQNL1N50BTA

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FQNL1N50B FQNL1N50B 500V N-Channel MOSFET March 2001 QFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. • 0.27A, 500V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical pF • Fast switching • Improved dv/dt capability TO-92L FQNL Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS IAR EAR dv/dt PD TJ, TSTG Parameter Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 2 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient FQNL1N50B 500 ± 30 -55 to +150 Units V A V A mJ V/ns W W/°C °C Units °C/W 2001 Fairchild Semiconductor Corporation FQNL1N50B Electrical Characteristics Parameter

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FQNL1N50B

FQNL1N50B
500V N-Channel MOSFET

March 2001

QFET TM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
• 0.27A, 500V, RDS on = = 10 V
• Low gate charge typical nC
• Low Crss typical pF
• Fast switching
• Improved dv/dt capability

TO-92L

FQNL Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 2

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Ambient

FQNL1N50B 500 ± 30
-55 to +150

Units V A V A mJ

V/ns W

W/°C °C

Units °C/W
2001 Fairchild Semiconductor Corporation

FQNL1N50B

Electrical Characteristics

Parameter

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Datasheet ID: FQNL1N50BBU 515274