FQU6N50CTU

FQU6N50CTU Datasheet

FQD6N50C / FQU6N50C N-Channel MOSFET

Part	Datasheet
FQU6N50CTU	FQU6N50CTU (pdf)

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FQD6N50C / FQU6N50C N-Channel MOSFET FQD6N50C / FQU6N50C N-Channel QFET MOSFET 500 V, A, March 2013 This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts. • A, 500 V, RDS on = Max = 10 V, ID = A • Low Gate Charge Typ. 19 nC • Low Crss Typ. 15 pF • 100% Avalanche Tested D-PAK G S FQD Series I-PAK FQU Series ● ● Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Power Dissipation TA = 25°C * Power Dissipation TC = 25°C - Derate above 25°C Note 3 Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds FQD6N50C / FQU6N50C 500 18 ± 30 300 61 -55 to +150 Unit V A V mJ A mJ V/ns W W/°C °C Thermal Characteristics

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FQD6N50C / FQU6N50C N-Channel MOSFET

FQD6N50C / FQU6N50C

N-Channel QFET MOSFET
500 V, A,

March 2013

This N-Channel enhancement mode power MOSFET is produced using Fairchild proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction PFC , and electronic lamp ballasts.
• A, 500 V, RDS on = Max = 10 V, ID = A
• Low Gate Charge Typ. 19 nC
• Low Crss Typ. 15 pF
• 100% Avalanche Tested

D-PAK

G S FQD Series

I-PAK

FQU Series
● ●

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt

TJ, TSTG TL

Parameter

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt Power Dissipation TA = 25°C * Power Dissipation TC = 25°C
- Derate above 25°C

Note 3

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

FQD6N50C / FQU6N50C 500 18 ± 30 300 61
-55 to +150

Unit V A V mJ A mJ

V/ns W

W/°C °C

Thermal Characteristics

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Datasheet ID: FQU6N50CTU 515213